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Published in: Lasers in Dental Science 1/2024

01-12-2024 | Diode Laser | Original Article

Second-stage exposure of implant by a 940-nm pulsating diode laser

Authors: Saad M. Jameel, Mohamed K. Dhahir, Salah A. Alkurtas

Published in: Lasers in Dental Science | Issue 1/2024

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Abstract

Purpose

This research aims to study the possible benefits of the 940-nm diode laser on gingiva healing, edema, and bleeding and compare it with the traditional method in second-stage implant exposure.

Material and method

This randomized clinical study included 15 healthy patients who needed implant exposure in the second stage and at least had two implants. This research included individuals split into two groups: Group 1 used a diode laser at 940 nm with an output power of 1.5 W in pulse mode (pulse interval 1.0 ms). In group 2, a traditional method (incision, puncture, flap) was utilized to expose the implant and place the gingival former. Follow-up scores were used on the first, third, and seventh days after surgery to record swelling, edema, and healing.

Result and conclusion

In the recent study, we observed that the scale of bleeding and edema decreased significantly throughout the first two visits in the laser group. Usually, the measured parameters disappear after 1 week, while healing increases significantly and topical anesthesia is enough for most cases when using a laser. Because diode lasers can only be absorbed by soft tissue, not surrounding structures, they are suitable for gingival surgery. A diode laser was shown to be both safe and effective for implant exposure in the second stage. Following therapy, patient satisfaction was excellent. There is no infection, discomfort, or edema while the gingival healing process proceeds.
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Metadata
Title
Second-stage exposure of implant by a 940-nm pulsating diode laser
Authors
Saad M. Jameel
Mohamed K. Dhahir
Salah A. Alkurtas
Publication date
01-12-2024
Publisher
Springer International Publishing
Published in
Lasers in Dental Science / Issue 1/2024
Electronic ISSN: 2367-2587
DOI
https://doi.org/10.1007/s41547-023-00209-x

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