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Two-temperature model for pulsed-laser-induced subsurface modifications in Si

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Abstract

We investigated the laser–material interaction during the production of laser-induced subsurface modifications in silicon with a numerical model. Such modifications are of interest for subsurface wafer dicing. To predict the shape of these modifications, a two-temperature model and an optical model were combined. We compared the model results with experimental data obtained by focusing laser pulses in the bulk of silicon wafers using a microscope objective. This comparison revealed a good agreement between the simulations and the experimental results. A parameter study was performed to investigate the effect of the laser wavelength, pulse duration and pulse energy on the formation of subsurface modifications. We found that both single- and multi-photon absorption may be used to produce subsurface modifications in silicon.

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Acknowledgements

The authors would like to thank Bert Dillingh for his assistance with the initial finite element solver and Fred van Goor for providing access to a laser source.

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Authors and Affiliations

  1. Faculty of Engineering Technology, Chair of Applied Laser Technology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands

    P. C. Verburg, G. R. B. E. Römer & A. J. Huis in ’t Veld

  2. Mechatronics, Mechanics and Materials, TNO Technical Sciences, De Rondom 1, 5600 HE, Eindhoven, The Netherlands

    A. J. Huis in ’t Veld

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  1. P. C. Verburg
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  2. G. R. B. E. Römer
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  3. A. J. Huis in ’t Veld
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Correspondence to P. C. Verburg.

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Verburg, P.C., Römer, G.R.B.E. & Huis in ’t Veld, A.J. Two-temperature model for pulsed-laser-induced subsurface modifications in Si. Appl. Phys. A 114, 1135–1143 (2014). https://doi.org/10.1007/s00339-013-7668-5

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